2SK2169 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2169
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 20 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Encapsulados: NMP
Búsqueda de reemplazo de 2SK2169 MOSFET
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2SK2169 datasheet
2sk2169.pdf
Ordering number ENN4556 N-Channel Silicon MOSFET 2SK2169 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SK2169] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C P
2sk2160.pdf
Ordering number ENN4600A N-Channel Silicon MOSFET 2SK2160 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2160] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO
2sk2167.pdf
Ordering number ENN4631 N-Channel Silicon MOSFET 2SK2167 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK2167] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 Gate 3.0 2 Drain 0.75 3 Source SANYO PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta =
Otros transistores... 2SK2129 , 2SK2130 , 2SK2145 , 2SK2151 , 2SK2152 , 2SK2154 , 2SK2160 , 2SK2167 , RFP50N06 , 2SK2170 , 2SK2199 , 2SK2210 , 2SK2211 , 2SK2218 , 2SJ187 , 2SK1440 , 2SK1441 .
History: DMT6009LSS | F12N65 | SCT2H12NZ
History: DMT6009LSS | F12N65 | SCT2H12NZ
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