Справочник MOSFET. 2SK2169

 

2SK2169 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK2169

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1 W

Предельно допустимое напряжение сток-исток (Uds): 250 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 0.4 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 10 ns

Выходная емкость (Cd): 20 pf

Сопротивление сток-исток открытого транзистора (Rds): 5 Ohm

Тип корпуса: NMP

Аналог (замена) для 2SK2169

 

 

2SK2169 Datasheet (PDF)

1.1. 2sk2169.pdf Size:88K _sanyo

2SK2169
2SK2169

Ordering number:ENN4556 N-Channel Silicon MOSFET 2SK2169 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SK2169] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

4.1. 2sk1871 2sk2153 2sk2164 2sk2321 2sk2432 2sk2435 2sk2436 2sk2438 2sk2439 2sk2626 2sk2634 2sk2635 2sk2636 2sk2637 2sk2773.pdf Size:199K _update-mosfet

2SK2169



4.2. 2sk2162.pdf Size:131K _toshiba

2SK2169
2SK2169



 4.3. 2sk2167.pdf Size:120K _sanyo

2SK2169
2SK2169

Ordering number:ENN4631 N-Channel Silicon MOSFET 2SK2167 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK2167] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 : Gate 3.0 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta = 25?C

4.4. 2sk2160.pdf Size:95K _sanyo

2SK2169
2SK2169

Ordering number:ENN4600A N-Channel Silicon MOSFET 2SK2160 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2160] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-22

 4.5. 2sk2161.pdf Size:96K _sanyo

2SK2169
2SK2169

Ordering number:ENN4601A N-Channel Silicon MOSFET 2SK2161 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2161] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-22

4.6. rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf Size:71K _renesas

2SK2169
2SK2169

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. 2sk213 2sk214 2sk215 2sk216.pdf Size:33K _hitachi

2SK2169
2SK2169

2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 1 D 2 3 1. Gate G 2. Source (Flange) 3. Drain S 2

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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