2SJ612 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ612  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.245 Ohm

Encapsulados: PCP

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2SJ612 datasheet

 ..1. Size:28K  sanyo
 2sj612.pdf pdf_icon

2SJ612

Ordering number ENN7178 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SJ612] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum R

 9.1. Size:143K  1
 2sj618.pdf pdf_icon

2SJ612

2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOS ) 2SJ618 High-Power Amplifier Applications Unit mm 15.9 MAX. 3.2 0.2 High breakdown voltage VDSS = -180 V Complementary to 2SK3497 2.0 0.3 1.0 0.3 0.25 5.45 0.2 5.45 0.2 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 1 2 3 Drain-source v

 9.2. Size:331K  toshiba
 2sj610.pdf pdf_icon

2SJ612

2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 1.85 (typ.) High forward transfer admittance Y = 18 S (typ.) fs Low leakage current I = -100 A (V = -250 V) DSS DS Enhancement-mode V = -1.5 -3.5 V

 9.3. Size:314K  toshiba
 2sj619.pdf pdf_icon

2SJ612

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance R = 0.15 (typ.) DS (ON) High forward transfer admittance Y = 7.7 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -10

MOSTRAR MÁS

Otros transistores... 2SK1445, 2SK1445LS, 2SK1446, 2SK1446LS, 2SK1447, 2SK1447LS, 2SK1448, 2SK1449, IRF9640, 2SK2836, 2SK2859, 2SK2864, 2SK2867, 2SK2909, 2SK2910, 2SK2911, 2SK2919