2SJ612 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ612
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.245 Ohm
Paquete / Cubierta: PCP
- Selección de transistores por parámetros
2SJ612 Datasheet (PDF)
2sj612.pdf

Ordering number : ENN71782SJ612P-Channel Silicon MOSFET2SJ612Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 2.5V drive.[2SJ612]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.752 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum R
2sj618.pdf

2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOS) 2SJ618 High-Power Amplifier Applications Unit: mm15.9 MAX. 3.2 0.2 High breakdown voltage: VDSS = -180 V Complementary to 2SK3497 2.0 0.3 1.0 0.3 0.25 5.45 0.2 5.45 0.2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1 2 3 Drain-source v
2sj610.pdf

2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit: mm Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.85 (typ.) High forward transfer admittance: |Y | = 18 S (typ.) fs Low leakage current: I = -100 A (V = -250 V) DSS DS Enhancement-mode: V = -1.5~-3.5 V
2sj619.pdf

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance: R = 0.15 (typ.) DS (ON) High forward transfer admittance: Y = 7.7 S (typ.) fs Low leakage current: IDSS = -100 A (max) (V = -10
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MRF5003 | IRFR120TR | 4N65KG-T60-K | RQK0608BQDQS | CSD17309Q3 | AONS36316
History: MRF5003 | IRFR120TR | 4N65KG-T60-K | RQK0608BQDQS | CSD17309Q3 | AONS36316



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