Справочник MOSFET. 2SJ612

 

2SJ612 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SJ612
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 3.2 nC
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.245 Ohm
   Тип корпуса: PCP

 Аналог (замена) для 2SJ612

 

 

2SJ612 Datasheet (PDF)

 ..1. Size:28K  sanyo
 2sj612.pdf

2SJ612 2SJ612

Ordering number : ENN71782SJ612P-Channel Silicon MOSFET2SJ612Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 2.5V drive.[2SJ612]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.752 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum R

 9.1. Size:143K  1
 2sj618.pdf

2SJ612 2SJ612

2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOS) 2SJ618 High-Power Amplifier Applications Unit: mm15.9 MAX. 3.2 0.2 High breakdown voltage: VDSS = -180 V Complementary to 2SK3497 2.0 0.3 1.0 0.3 0.25 5.45 0.2 5.45 0.2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit1 2 3 Drain-source v

 9.2. Size:331K  toshiba
 2sj610.pdf

2SJ612 2SJ612

2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit: mm Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.85 (typ.) High forward transfer admittance: |Y | = 18 S (typ.) fs Low leakage current: I = -100 A (V = -250 V) DSS DS Enhancement-mode: V = -1.5~-3.5 V

 9.3. Size:314K  toshiba
 2sj619.pdf

2SJ612 2SJ612

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance: R = 0.15 (typ.) DS (ON) High forward transfer admittance: Y = 7.7 S (typ.) fs Low leakage current: IDSS = -100 A (max) (V = -10

 9.4. Size:32K  sanyo
 2sj616.pdf

2SJ612 2SJ612

Ordering number : ENN72702SJ616P-Channel Silicon MOSFET2SJ616Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive.[2SJ616]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Rati

 9.5. Size:28K  sanyo
 2sj615.pdf

2SJ612 2SJ612

Ordering number : ENN71792SJ615P-Channel Silicon MOSFET2SJ615Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A 4V drive.[2SJ615]4.51.51.60.4 0.53 2 10.41.53.0(Bottom view)1 : Gate0.752 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Rat

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