2SJ612 - аналоги, параметры транзистора - Справочник транзисторов

2SJ612 даташит

..1. Size:28K sanyo
2sj612.pdf pdf_icon

Ordering number ENN7178 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SJ612] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum R

9.1. Size:143K 1
2sj618.pdf pdf_icon

2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOS ) 2SJ618 High-Power Amplifier Applications Unit mm 15.9 MAX. 3.2 0.2 High breakdown voltage VDSS = -180 V Complementary to 2SK3497 2.0 0.3 1.0 0.3 0.25 5.45 0.2 5.45 0.2 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit 1 2 3 Drain-source v

9.2. Size:331K toshiba
2sj610.pdf pdf_icon

2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 1.85 (typ.) High forward transfer admittance Y = 18 S (typ.) fs Low leakage current I = -100 A (V = -250 V) DSS DS Enhancement-mode V = -1.5 -3.5 V

9.3. Size:314K toshiba
2sj619.pdf pdf_icon

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit mm Motor Drive Applications 4-V gate drive Low drain-source ON resistance R = 0.15 (typ.) DS (ON) High forward transfer admittance Y = 7.7 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -10