2SK65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK65
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.02 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Id|ⓘ - Corriente continua de drenaje: 0.002 A
Tjⓘ - Temperatura máxima de unión: 70 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3000 Ohm
Paquete / Cubierta: S-TYPE
Búsqueda de reemplazo de MOSFET 2SK65
2SK65 Datasheet (PDF)
2sk65.pdf
Silicon Junction FETs (Small Signal) 2SK652SK65Silicon N-Channel JunctionUnit : mm4.5 0.1 2.0 0.2For impedance conversion in low frequency1.0For electret capacitor microphone Features Diode connected between gate and source Low noise voltage0.45 0.05 Absolute Maximum Ratings (Ta = 25C)2.54 0.8 0.1Parameter Symbol Rating Unit1 2 31 : DrainDrain-Source
2sk655.pdf
Silicon MOS FETs (Small Signal) 2SK6552SK655Silicon N-Channel MOSUnit : mmFor switching4.0 0.2 Features High-speed switching Radial taping possiblemarking1 2 3 Absolute Maximum Ratings (Ta = 25C)1.27 1.27Symbol UnitParameter Rating2.54 0.151 : SourceVDS VDrain-Source voltage 502 : DrainVGSO VGate-Source voltage 83 : GateID mADrain current
2sk656.pdf
Silicon MOS FETs (Small Signal) 2SK6562SK656Silicon N-Channel MOSUnit : mmFor switching4.0 0.2 Features High-speed switching Small drive current owing to high input impedance Extremely high electrostatic destruction voltagemarking1 2 3 Absolute Maximum Ratings (Ta = 25C)1.27 1.27Symbol UnitParameter Rating2.54 0.151 : SourceVDS VDrain-Source voltage 5
2sk657.pdf
Silicon MOS FETs (Small Signal) 2SK6572SK657Silicon N-Channel MOSUnit : mmFor switching6.9 0.1 2.5 0.11.51.5 R0.9 1.0 FeaturesR0.9 High-speed switching Easy automatic- /manual-insertion due to M type package. Self-fix-ing to printed circuits board.0.850.55 0.1 0.45 0.053 2 1 Absolute Maximum Ratings (Ta = 25C)SymbolParameter Rating Unit2.5 2.51
2sk659.pdf
isc N-Channel MOSFET Transistor 2SK659FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918