2SK65 Specs and Replacement
Type Designator: 2SK65
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.02 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.002 A
Tj ⓘ - Maximum Junction Temperature: 70 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3000 Ohm
Package: S-TYPE
2SK65 substitution
- MOSFET ⓘ Cross-Reference Search
2SK65 datasheet
2sk65.pdf
Silicon Junction FETs (Small Signal) 2SK65 2SK65 Silicon N-Channel Junction Unit mm 4.5 0.1 2.0 0.2 For impedance conversion in low frequency 1.0 For electret capacitor microphone Features Diode connected between gate and source Low noise voltage 0.45 0.05 Absolute Maximum Ratings (Ta = 25 C) 2.54 0.8 0.1 Parameter Symbol Rating Unit 1 2 3 1 Drain Drain-Source ... See More ⇒
2sk655.pdf
Silicon MOS FETs (Small Signal) 2SK655 2SK655 Silicon N-Channel MOS Unit mm For switching 4.0 0.2 Features High-speed switching Radial taping possible marking 1 2 3 Absolute Maximum Ratings (Ta = 25 C) 1.27 1.27 Symbol Unit Parameter Rating 2.54 0.15 1 Source VDS V Drain-Source voltage 50 2 Drain VGSO V Gate-Source voltage 8 3 Gate ID mA Drain current ... See More ⇒
Detailed specifications: 2SK2911 , 2SK2919 , 2SK2951 , 2SK2969 , 2SK2987 , 2SK601 , 2SK614 , 2SK615 , IRF740 , 2SK690 , 2SK758 , 2SK771 , 2SK772 , 2SK937 , 2SK2711 , 2SK2713 , 2SK2714 .
History: 2SK2731
Keywords - 2SK65 MOSFET specs
2SK65 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK2731
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