2SK937 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK937
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 100 Ohm
   Paquete / Cubierta: TO92

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2SK937 Datasheet (PDF)

..1. Size:79K sanyo
2sk937.pdf

Ordering number:EN3006N-Channel Junction Silicon FET2SK937High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Large yfs .2019B Small Ciss.[2SK937]5.04.04.00.450.50.440.451 : Source2 : Gate3 : Drain1 2 3JEDEC : TO-92EIAJ : SC-431.3 1.3SANYO : NPSpecificationsAbsolu

..2. Size:48K no
2sk932 2sk937 2sk968 2sk998 2sk1000.pdf

9.1. Size:91K sanyo
2sk932.pdf

Ordering number:EN2841N-Channel Junction Silicon FET2SK932High-FrequencyLow-Noise Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier, low-noise amplifier. unit:mm2050AFeatures [2SK932] Adoption of FBET process.0.40.16 Large yfs .3 Small Ciss.0 to 0.1 Ultralow noise figure. Ultrasmall-sized package permitting 2SK

9.2. Size:1048K onsemi
2sk932.pdf

Ordering number : EN2841B2SK932N-Channel JFEThttp://onsemi.com15V, 7.3 to 24mA, 50mS, CPApplications AM tuner RF amplifier, low-noise amplifierFeatures Adoption of FBET process Large yfs | | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmerSpecificationsAbsolute Maximum Ratings

9.3. Size:170K isahaya
2sk930.pdf

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub

9.4. Size:200K inchange semiconductor
2sk935.pdf

isc N-Channel MOSFET Transistor 2SK935DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 300 VDSS GSV Gate-Source

9.5. Size:200K inchange semiconductor
2sk934.pdf

isc N-Channel MOSFET Transistor 2SK934DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VDSS GSV Gate-Source

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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