Справочник MOSFET. 2SK937

 

2SK937 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK937
   Тип транзистора: JFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.3 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Минимальное напряжение отсечки |Vgs(off)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 0.1 A
   Максимальная температура канала (Tj): 150 °C
   Сопротивление сток-исток открытого транзистора (Rds): 100 Ohm
   Тип корпуса: TO92

 Аналог (замена) для 2SK937

 

 

2SK937 Datasheet (PDF)

 ..1. Size:79K  sanyo
 2sk937.pdf

2SK937 2SK937

Ordering number:EN3006N-Channel Junction Silicon FET2SK937High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Large yfs .2019B Small Ciss.[2SK937]5.04.04.00.450.50.440.451 : Source2 : Gate3 : Drain1 2 3JEDEC : TO-92EIAJ : SC-431.3 1.3SANYO : NPSpecificationsAbsolu

 ..2. Size:48K  no
 2sk932 2sk937 2sk968 2sk998 2sk1000.pdf

2SK937

 9.1. Size:91K  sanyo
 2sk932.pdf

2SK937 2SK937

Ordering number:EN2841N-Channel Junction Silicon FET2SK932High-FrequencyLow-Noise Amplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier, low-noise amplifier. unit:mm2050AFeatures [2SK932] Adoption of FBET process.0.40.16 Large yfs .3 Small Ciss.0 to 0.1 Ultralow noise figure. Ultrasmall-sized package permitting 2SK

 9.2. Size:1048K  onsemi
 2sk932.pdf

2SK937 2SK937

Ordering number : EN2841B2SK932N-Channel JFEThttp://onsemi.com15V, 7.3 to 24mA, 50mS, CPApplications AM tuner RF amplifier, low-noise amplifierFeatures Adoption of FBET process Large yfs | | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmerSpecificationsAbsolute Maximum Ratings

 9.3. Size:170K  isahaya
 2sk930.pdf

2SK937 2SK937

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub

 9.4. Size:200K  inchange semiconductor
 2sk935.pdf

2SK937 2SK937

isc N-Channel MOSFET Transistor 2SK935DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 300 VDSS GSV Gate-Source

 9.5. Size:200K  inchange semiconductor
 2sk934.pdf

2SK937 2SK937

isc N-Channel MOSFET Transistor 2SK934DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VDSS GSV Gate-Source

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