2SK2660 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2660
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 10 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VCossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
Paquete / Cubierta: SC63
Búsqueda de reemplazo de MOSFET 2SK2660
2SK2660 Datasheet (PDF)
2sk2660.pdf
Power F-MOS FETs 2SK7582SK2660(Tentative)Silicon N-Channel Power F-MOSUnit : mm Features6.5 0.1 High-speed switching5.3 0.14.35 0.1 High drain-source voltage (VDSS)3.0 0.1 Applications High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)1 : Gate1 2 32 : DrainParameter Symbol Ratin
2sk2661.pdf
2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV) 2SK2661 Chopper Regulator, DCDC Converter and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancementmode : Vth = 2
2sk2662.pdf
2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2662 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =
3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf
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2sk2666.pdf
SHINDENGEN N- NEDI MENSI ONSOUTLI2SK2666Case : FTO-220Unit:mmF3F90HVX900V 3A(Ciss)
2sk2663.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2663Case : E-pack( F1E90HVX2 )(Unit : mm)900V 1AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC 240V inputHi
2sk2667.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2667Case : MTO-3P(Unit : mm)( F3W90HVX2 )900V 3AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC
2sk2665 f3s90hvx2.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2665Case : STO-220(Unit : mm)( F3S90HVX2 )900V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
2sk2664 f3v90hvx2.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2664Case : TO-220(Unit : mm)( F3V90HVX2 )900V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
2sk2669.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2669Case : TO-220(Unit : mm)( F5V90HVX2 )900V 5AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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