2SK2660 Todos los transistores

 ..1. Size:23K  panasonic
 2sk2660.pdf

Power F-MOS FETs 2SK758 2SK2660(Tentative) Silicon N-Channel Power F-MOS Unit mm Features 6.5 0.1 High-speed switching 5.3 0.1 4.35 0.1 High drain-source voltage (VDSS) 3.0 0.1 Applications High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) 1 Gate 1 2 3 2 Drain Parameter Symbol Ratin

 8.1. Size:385K  toshiba
 2sk2661.pdf

2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( MOSV) 2SK2661 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit mm Low drain source ON resistance RDS = 1.35 (typ.) (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement mode Vth = 2

 8.2. Size:414K  toshiba
 2sk2662.pdf

2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2662 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.35 (typ.) (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V =

 8.3. Size:150K  no
 3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf

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 8.4. Size:254K  no
 2sk2666.pdf

SHINDENGEN N- NEDI MENSI ONS OUTLI 2SK2666 Case FTO-220 Unit mm F3F90HVX 900V 3A (Ciss)

 8.5. Size:336K  shindengen
 2sk2663.pdf

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2663 Case E-pack ( F1E90HVX2 ) (Unit mm) 900V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input Hi

 8.6. Size:430K  shindengen
 2sk2667.pdf

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2667 Case MTO-3P (Unit mm) ( F3W90HVX2 ) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC

 8.7. Size:271K  shindengen
 2sk2665 f3s90hvx2.pdf

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2665 Case STO-220 (Unit mm) ( F3S90HVX2 ) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply

 8.8. Size:272K  shindengen
 2sk2664 f3v90hvx2.pdf

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2664 Case TO-220 (Unit mm) ( F3V90HVX2 ) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply

 8.9. Size:413K  shenzhen
 2sk2669.pdf

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2669 Case TO-220 (Unit mm) ( F5V90HVX2 ) 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply