2SK1472 Todos los transistores

 

2SK1472 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1472
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TP

 Búsqueda de reemplazo de MOSFET 2SK1472

 

2SK1472 Datasheet (PDF)

 ..1. Size:119K  sanyo
2sk1472.pdf

2SK1472
2SK1472

Ordering number:EN3773AN-Channel Silicon MOSFET2SK1472Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK1472]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1472]6.5 2.35.0 0.540.5

 8.1. Size:59K  toshiba
2sk147.pdf

2SK1472

 8.2. Size:120K  sanyo
2sk1474.pdf

2SK1472
2SK1472

Ordering number:EN3775AN-Channel Silicon MOSFET2SK1474Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK1474]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1474]6.5 2.35.0 0.540.5

 8.3. Size:92K  sanyo
2sk1471.pdf

2SK1472
2SK1472

Ordering number:EN3772AN-Channel Silicon MOSFET2SK1471Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK1471]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1471]6.5 2.35.0 0.540.5

 8.4. Size:123K  sanyo
2sk1473.pdf

2SK1472
2SK1472

Ordering number:EN3774N-Channel Silicon MOSFET2SK1473Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK1473]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParamete

 8.5. Size:120K  sanyo
2sk1475.pdf

2SK1472
2SK1472

Ordering number:EN3776AN-Channel Silicon MOSFET2SK1475Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK1475]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1475]6.5 2.35.0 0.540.5

 8.6. Size:86K  sanyo
2sk147.pdf

2SK1472
2SK1472

 8.7. Size:97K  sanyo
2sk1470.pdf

2SK1472
2SK1472

Ordering number:EN3771AN-Channel Silicon MOSFET2SK1470Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK1470]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParamet

 8.8. Size:33K  panasonic
2sk1478.pdf

2SK1472
2SK1472

Power F-MOS FETs 2SK14782SK1478Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)= 0.4(typ)5.5 0.2 2.7 0.2High-speed switching : tf = 44ns(typ)No secondary breakdown3.1 0.1High breakdown voltage, large allowable power dissipation Applications1.3 0.2Non-contact relay1.4 0.1Solenoid drive+0.20.5

 8.9. Size:192K  inchange semiconductor
2sk1478.pdf

2SK1472
2SK1472

isc N-Channel MOSFET Transistor 2SK1478DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VDSS GSV Gate-Source

 8.10. Size:202K  inchange semiconductor
2sk1477.pdf

2SK1472
2SK1472

isc N-Channel MOSFET Transistor 2SK1477DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen

 8.11. Size:202K  inchange semiconductor
2sk1476.pdf

2SK1472
2SK1472

isc N-Channel MOSFET Transistor 2SK1476DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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