2SK1472
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1472
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
TP
2SK1472
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1472
Datasheet (PDF)
..1. Size:119K sanyo
2sk1472.pdf 
Ordering number:EN3773AN-Channel Silicon MOSFET2SK1472Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK1472]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1472]6.5 2.35.0 0.540.5
8.2. Size:120K sanyo
2sk1474.pdf
Ordering number:EN3775AN-Channel Silicon MOSFET2SK1474Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK1474]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1474]6.5 2.35.0 0.540.5
8.3. Size:92K sanyo
2sk1471.pdf
Ordering number:EN3772AN-Channel Silicon MOSFET2SK1471Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK1471]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1471]6.5 2.35.0 0.540.5
8.4. Size:123K sanyo
2sk1473.pdf
Ordering number:EN3774N-Channel Silicon MOSFET2SK1473Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK1473]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParamete
8.5. Size:120K sanyo
2sk1475.pdf
Ordering number:EN3776AN-Channel Silicon MOSFET2SK1475Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK1475]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK1475]6.5 2.35.0 0.540.5
8.7. Size:97K sanyo
2sk1470.pdf
Ordering number:EN3771AN-Channel Silicon MOSFET2SK1470Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK1470]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParamet
8.8. Size:33K panasonic
2sk1478.pdf
Power F-MOS FETs 2SK14782SK1478Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)= 0.4(typ)5.5 0.2 2.7 0.2High-speed switching : tf = 44ns(typ)No secondary breakdown3.1 0.1High breakdown voltage, large allowable power dissipation Applications1.3 0.2Non-contact relay1.4 0.1Solenoid drive+0.20.5
8.9. Size:192K inchange semiconductor
2sk1478.pdf
isc N-Channel MOSFET Transistor 2SK1478DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VDSS GSV Gate-Source
8.10. Size:202K inchange semiconductor
2sk1477.pdf
isc N-Channel MOSFET Transistor 2SK1477DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen
8.11. Size:202K inchange semiconductor
2sk1476.pdf
isc N-Channel MOSFET Transistor 2SK1476DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
