2SK2509 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2509
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: N-TYPE

Búsqueda de reemplazo de MOSFET 2SK2509

2SK2509 Datasheet (PDF)

..1. Size:30K panasonic
2sk2509.pdf

Power F-MOS FETs 2SK25092SK2509Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed3.4 0.38.5 0.26.0 0.5 1.0 0.1High-speed switchingLow ON-resistanceNo secondary breakdown1.5max. 1.1max. ApplicationsNon-contact relay0.8 0.1 0.5max.Solenoid drive2.54 0.3Motor drive5.08 0.5Control equipment1 2 3Switching mo

8.1. Size:412K toshiba
2sk2508.pdf

2SK2508 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2508 Switching Regulator and DC-DC Converter and Motor Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.18 (typ.) High forward transfer admittance : |Y | = 13 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V

8.2. Size:426K toshiba
2sk2507.pdf

2SK2507 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2507 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.034 (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 50 V) Enhancement mode

8.3. Size:83K rohm
2sk2504tl.pdf

2SK2504 Transistors 4V Drive Nch MOS FET 2SK2504 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET CPT36.5 5.12.30.5 Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 0.754) 4V drive. 0.650.92.3(1)Gate5) Drive circuits can be simple. 2.3(1) (2) (3)0.5(2)Drain1.06) Parallel use is e

8.4. Size:135K rohm
2sk2503 1-5.pdf

8.5. Size:135K rohm
2sk2504 1-5.pdf

8.6. Size:142K rohm
2sk2503tl.pdf

TransistorsSmall switching (60V, 5A)2SK2503FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Low-voltage drive (4V).5) Easily designed drive circuits.6) Easy to use in parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications122Transistors 2S

8.7. Size:134K rohm
2sk2504.pdf

TransistorsSmall switching (100V, 5A)2SK2504FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Low-voltage drive (4V).5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications126Transistors 2SK2504

8.8. Size:135K rohm
2sk2503.pdf