2SK2538 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2538

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: TO220

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2SK2538 datasheet

 ..1. Size:30K  panasonic
2sk2538.pdf pdf_icon

2SK2538

Power F-MOS FETs 2SK2538 2SK2538 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Avalanche energy capability guaranteed 5.5 0.2 2.7 0.2 High-speed switching No secondary breakdown 3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0.5 -0.1 0.8 0.1 Absolute Maxi

 8.1. Size:45K  sanyo
2sk2532.pdf pdf_icon

2SK2538

Ordering number EN5457 2SK2532 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2532 Applications Features Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25 C

 8.2. Size:39K  sanyo
2sk2533.pdf pdf_icon

2SK2538

Ordering number EN8611 2SK2533 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2533 General-Purpose Switching Device Applications Features Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. High-speed switching. Specifications Absolute Max

 8.3. Size:44K  sanyo
2sk2534.pdf pdf_icon

2SK2538

Ordering number EN8612 2SK2534 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2534 General-Purpose Switching Device Applications Features Low ON-resistance. High-speed switching. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Specifications Absolute Maximum Ratings at Ta=25

Otros transistores... 2SK1473, 2SK1474, 2SK1475, 2SK1478, 2SK1578, 2SJ190, 2SK2509, 2SK2530, P60NF06, 2SK2539, 2SK2555, 2SK2571, 2SK2572, 2SK2573, 2SK2574, 2SK2575, 2SK2576