2SK2538
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2538
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 60
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
TO220
2SK2538
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2538
Datasheet (PDF)
..1. Size:30K panasonic
2sk2538.pdf
Power F-MOS FETs 2SK25382SK2538Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Avalanche energy capability guaranteed5.5 0.2 2.7 0.2High-speed switchingNo secondary breakdown3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2For high-frequency power amplification1.4 0.1+0.20.5 -0.10.8 0.1 Absolute Maxi
8.1. Size:45K sanyo
2sk2532.pdf
Ordering number : EN5457 2SK2532SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2532ApplicationsFeatures Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountablepackage.SpecificationsAbsolute Maximum Ratings at Ta=25C
8.2. Size:39K sanyo
2sk2533.pdf
Ordering number : EN8611 2SK2533SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFET2SK2533 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surfacemountable package. High-speed switching.SpecificationsAbsolute Max
8.3. Size:44K sanyo
2sk2534.pdf
Ordering number : EN8612 2SK2534SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFET2SK2534 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. High-speed switching. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountablepackage.SpecificationsAbsolute Maximum Ratings at Ta=25
8.4. Size:42K sanyo
2sk2530.pdf
Ordering number:ENN6406N-Channel Silicon MOSFET2SK2530Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B Low voltage drive.[2SK2530]6.52.35.00.540.850.71.20.6 0.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TP2092B[2SK2530]6.5 2.35.0 0.540.
8.5. Size:41K sanyo
2sk2531.pdf
Ordering number : EN8609 2SK2531SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2531ApplicationsFeatures Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountablepackage.SpecificationsAbsolute Maximum Ratings at Ta=25C
8.6. Size:65K sanyo
2sk2539.pdf
Ordering number:ENN5075N-Channel Junction Silicon FET2SK2539High-Frequency Amplifier,Analog Switch ApplicationsFeatures Package Dimensions Large | yfs |.unit:mm Small Ciss.2050A Small-sized package permitting 2SK2539-applied[2SK2539]sets to be made small and slim. Adoption of FBET process.0.40.1630 to 0.11 0.95 0.95 21.92.91 : Source2 : Dr
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.