2SK242 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK242
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.02 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm
   Paquete / Cubierta: CP

Búsqueda de reemplazo de MOSFET 2SK242

2SK242 Datasheet (PDF)

..1. Size:170K sanyo
2sk242.pdf

Ordering number:EN695GN-Channel Junction Silicon FET2SK242Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Ultrasmall-sized package permitting 2SK242-appliedunit:mmsets to be made small and slim.2024B Small Crss (Crss=0.04pF typ).[2SK242]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Drain3 : SourceSANYO : CPSpec

0.1. Size:13K hitachi
2sk2424.pdf

2SK2424Silicon N Channel MOS FETApplicationTO220CFMHigh speed power switchingFeatures Low onresistance High speed switching2 Low drive current1 No Secondary Breakdown231 Suitable for Switching regulator, DC DC converter1. Gate2. Drain3. Source3Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

0.2. Size:28K hitachi
2sk2425.pdf

2SK2425Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2425Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

0.3. Size:34K hitachi
2sk1637 2sk2422.pdf

2SK1637, 2SK2422Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-220FMD1231. GateG2. Drain3. SourceS2SK1637, 2SK2422Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating

0.4. Size:28K hitachi
2sk2423.pdf

2SK2423Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2423Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

0.5. Size:28K hitachi
2sk2426.pdf

2SK2426Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter.OutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2426Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

0.6. Size:33K no
2sk2421.pdf

2SK2421External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 40 A I 100 A V = 60V, V = 0VD DSS DS GSI 160 A V 2.0 4.0 V V = 10V, I = 1mAD (pulse) TH DS D

0.7. Size:34K no
2sk2420.pdf

2SK2420External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 30 A I 100 A V = 60V, V = 0VD DSS DS GSI 120 A V 2.0 4.0 V V = 10V, I = 250AD (pulse) TH DS

0.8. Size:42K sanken-ele
2sk2420.pdf

0.9. Size:190K inchange semiconductor
2sk2424.pdf

isc N-Channel MOSFET Transistor 2SK2424DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

0.10. Size:252K inchange semiconductor
2sk2420.pdf

isc N-Channel MOSFET Transistor 2SK2420FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

0.11. Size:213K inchange semiconductor
2sk2425.pdf

isc N-Channel MOSFET Transistor 2SK2425DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

0.12. Size:213K inchange semiconductor
2sk2423.pdf

isc N-Channel MOSFET Transistor 2SK2423DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

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