2SK242. Аналоги и основные параметры
Наименование производителя: 2SK242
Тип транзистора: JFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 0.15 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.02 A
Tj ⓘ - Максимальная температура канала: 125 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 4 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 500 Ohm
Тип корпуса: CP
Аналог (замена) для 2SK242
- подборⓘ MOSFET транзистора по параметрам
2SK242 даташит
..1. Size:170K sanyo
2sk242.pdf 

Ordering number EN695G N-Channel Junction Silicon FET 2SK242 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Ultrasmall-sized package permitting 2SK242-applied unit mm sets to be made small and slim. 2024B Small Crss (Crss=0.04pF typ). [2SK242] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Drain 3 Source SANYO CP Spec
0.2. Size:28K hitachi
2sk2425.pdf 

2SK2425 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2425 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to so
0.3. Size:34K hitachi
2sk1637 2sk2422.pdf 

2SK1637, 2SK2422 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SK1637, 2SK2422 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating
0.4. Size:28K hitachi
2sk2423.pdf 

2SK2423 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2423 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to so
0.5. Size:28K hitachi
2sk2426.pdf 

2SK2426 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM 1 D 2 3 1. Gate G 2. Drain 3. Source S 2SK2426 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to so
0.6. Size:33K no
2sk2421.pdf 

2SK2421 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 100 A, V = 0V DSS (BR) DSS D GS V 20 V I 100 nA V = 20V GSS GSS GS I 40 A I 100 A V = 60V, V = 0V D DSS DS GS I 160 A V 2.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS D
0.7. Size:34K no
2sk2420.pdf 

2SK2420 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 100 A, V = 0V DSS (BR) DSS D GS V 20 V I 100 nA V = 20V GSS GSS GS I 30 A I 100 A V = 60V, V = 0V D DSS DS GS I 120 A V 2.0 4.0 V V = 10V, I = 250 A D (pulse) TH DS
0.8. Size:42K sanken-ele
2sk2420.pdf 

2SK2420 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 100 A, V = 0V DSS (BR) DSS D GS V 20 V I 100 nA V = 20V GSS GSS GS I 30 A I 100 A V = 60V, V = 0V D DSS DS GS I 120 A V 2.0 4.0 V V = 10V, I = 250 A D (pulse) TH DS
0.9. Size:190K inchange semiconductor
2sk2424.pdf 

isc N-Channel MOSFET Transistor 2SK2424 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr
0.10. Size:252K inchange semiconductor
2sk2420.pdf 

isc N-Channel MOSFET Transistor 2SK2420 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose
0.11. Size:213K inchange semiconductor
2sk2425.pdf 

isc N-Channel MOSFET Transistor 2SK2425 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr
0.12. Size:213K inchange semiconductor
2sk2423.pdf 

isc N-Channel MOSFET Transistor 2SK2423 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr
Другие IGBT... 2SK2577, 2SK2578, 2SK2579, 2SK2580, 2SK2581, 2SK2588, 2SK2593, 2SK2406, MMIS60R580P, 2SK2441, 2SK2459N, 2SK2460N, 2SK2463, 2SK2464, 2SK2474, 2SK2495, 2SJ191