2SJ194 Todos los transistores

 

2SJ194 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ194
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 20 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 15 V
   Corriente continua de drenaje |Id|: 2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Voltaje de corte de la puerta |Vgs(off)|: 1 V
   Tiempo de subida (tr): 14 nS
   Conductancia de drenaje-sustrato (Cd): 100 pF
   Resistencia entre drenaje y fuente RDS(on): 0.95 Ohm
   Paquete / Cubierta: TP

 Búsqueda de reemplazo de MOSFET 2SJ194

 

2SJ194 Datasheet (PDF)

 ..1. Size:117K  sanyo
2sj194.pdf

2SJ194
2SJ194

Ordering number:EN3767P-Channel Silicon MOSFET2SJ194Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ194]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ194]6.5 2.35.0 0.540.50.

 9.1. Size:123K  sanyo
2sj193.pdf

2SJ194
2SJ194

Ordering number:EN3766P-Channel Silicon MOSFET2SJ193Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ193]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

 9.2. Size:89K  sanyo
2sj191.pdf

2SJ194
2SJ194

Ordering number:EN3764AP-Channel Silicon MOSFET2SJ191Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ191]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ191]6.5 2.35.0 0.540.50

 9.3. Size:93K  sanyo
2sj190.pdf

2SJ194
2SJ194

Ordering number:EN3763P-Channel Silicon MOSFET2SJ190Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ190]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

 9.4. Size:118K  sanyo
2sj192.pdf

2SJ194
2SJ194

Ordering number:EN3765P-Channel Silicon MOSFET2SJ192Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ192]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ192]6.5 2.35.0 0.540.50.

 9.5. Size:122K  sanyo
2sj195.pdf

2SJ194
2SJ194

Ordering number:EN3768AP-Channel Silicon MOSFET2SJ195Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ195]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ195]6.5 2.35.0 0.540.50

 9.6. Size:343K  nec
2sj198.pdf

2SJ194
2SJ194

 9.7. Size:308K  nec
2sj199.pdf

2SJ194
2SJ194

 9.8. Size:301K  nec
2sj197.pdf

2SJ194
2SJ194

 9.9. Size:386K  nec
2sj196.pdf

2SJ194
2SJ194

 9.10. Size:1320K  kexin
2sj199.pdf

2SJ194
2SJ194

SMD Type MOSFETP-Channel MOSFET2SJ1991.70 0.1 Features VDS (V) =-100V ID =-1 A (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 2 (VGS =-10V) RDS(ON) 2.5 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -100V Gate-Source Voltage VGS 20 Continuous Drain Current ID

 9.11. Size:1281K  kexin
2sj197.pdf

2SJ194
2SJ194

SMD Type MOSFETP-Channel MOSFET2SJ1971.70 0.1 Features VDS (V) =-60V ID =-1.5 A0.42 0.10.46 0.1 RDS(ON) 1 (VGS =-10V) RDS(ON) 1.5 (VGS =-4V) Comp;ementary to 2SK14831.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20 Continuou

 9.12. Size:1483K  cn vbsemi
2sj197.pdf

2SJ194
2SJ194

2SJ197www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.058 at VGS = - 10 V - 6.5APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 5.5 Load SwitchSDGDG D SP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Lim

 9.13. Size:830K  cn vbsemi
2sj191.pdf

2SJ194
2SJ194

2SJ191www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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