2SJ194
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ194
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95
Ohm
Package:
TP
2SJ194
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ194
Datasheet (PDF)
..1. Size:117K sanyo
2sj194.pdf
Ordering number:EN3767P-Channel Silicon MOSFET2SJ194Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ194]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ194]6.5 2.35.0 0.540.50.
9.1. Size:123K sanyo
2sj193.pdf
Ordering number:EN3766P-Channel Silicon MOSFET2SJ193Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ193]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter
9.2. Size:89K sanyo
2sj191.pdf
Ordering number:EN3764AP-Channel Silicon MOSFET2SJ191Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ191]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ191]6.5 2.35.0 0.540.50
9.3. Size:93K sanyo
2sj190.pdf
Ordering number:EN3763P-Channel Silicon MOSFET2SJ190Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ190]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter
9.4. Size:118K sanyo
2sj192.pdf
Ordering number:EN3765P-Channel Silicon MOSFET2SJ192Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ192]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ192]6.5 2.35.0 0.540.50.
9.5. Size:122K sanyo
2sj195.pdf
Ordering number:EN3768AP-Channel Silicon MOSFET2SJ195Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ195]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ195]6.5 2.35.0 0.540.50
9.10. Size:1320K kexin
2sj199.pdf
SMD Type MOSFETP-Channel MOSFET2SJ1991.70 0.1 Features VDS (V) =-100V ID =-1 A (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 2 (VGS =-10V) RDS(ON) 2.5 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -100V Gate-Source Voltage VGS 20 Continuous Drain Current ID
9.11. Size:1281K kexin
2sj197.pdf
SMD Type MOSFETP-Channel MOSFET2SJ1971.70 0.1 Features VDS (V) =-60V ID =-1.5 A0.42 0.10.46 0.1 RDS(ON) 1 (VGS =-10V) RDS(ON) 1.5 (VGS =-4V) Comp;ementary to 2SK14831.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20 Continuou
9.12. Size:1483K cn vbsemi
2sj197.pdf
2SJ197www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.058 at VGS = - 10 V - 6.5APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 5.5 Load SwitchSDGDG D SP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Lim
9.13. Size:830K cn vbsemi
2sj191.pdf
2SJ191www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol
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