2SJ255 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ255

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 60 nS

Conductancia de drenaje-sustrato (Cd): 780 pF

Resistencia drenaje-fuente RDS(on): 0.095 Ohm

Empaquetado / Estuche: TO220ML

Búsqueda de reemplazo de MOSFET 2SJ255

2SJ255 Datasheet (PDF)

1.1. 2sj255.pdf Size:92K _sanyo

Ordering number:EN4744 P-Channel Silicon MOSFET 2SJ255 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SJ255] � Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-2

5.1. 2sj259.pdf Size:99K _sanyo

Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2093A � Low-voltage drive. [2SJ259] � Surface mount type device making the following 4.5 10.2 1.3 possible. � Reduction in the number of manufacturing pro- cesses for 2SJ259-applied equipment. � Hig

5.2. 2sj257.pdf Size:96K _sanyo

Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2093A � Low-voltage drive. [2SJ257] � Surface mount type device making the following 4.5 10.2 1.3 possible. � Reduction in the number of manufacturing pro- cesses for 2SJ257-applied equipment. � Hig

5.3. 2sj258.pdf Size:93K _sanyo

Ordering number:EN4745 P-Channel Silicon MOSFET 2SJ258 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2090A � Low-voltage drive. [2SJ258] � Surface mount type device making the following 10.2 4.5 1.3 possible. � Reduction in the assembling time for 2SJ258- applied equipment. � High-density surface m

5.4. 2sj256.pdf Size:92K _sanyo

Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SJ256] � Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.5. 2sj254.pdf Size:93K _sanyo

Ordering number:EN4231 P-Channel Silicon MOSFET 2SJ254 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2063A � Low-voltage drive. [2SJ254] � Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.6. 2sj256.pdf Size:193K _inchange_semiconductor

isc P-Channel MOSFET Transistor 2SJ256 DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

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