2SJ255 Todos los transistores

Ordering number EN4744 P-Channel Silicon MOSFET 2SJ255 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ255] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO

Ordering number EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ256] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO

Ordering number EN4745 P-Channel Silicon MOSFET 2SJ258 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SJ258] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SJ258- applied equipment. High-density

Ordering number EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ259] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ259-applied equipment

Ordering number EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ257] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ257-applied equipment

Ordering number EN4231 P-Channel Silicon MOSFET 2SJ254 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ254] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO

isc P-Channel MOSFET Transistor 2SJ256 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(