2SJ256 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ256

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 1200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: TO220ML

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2SJ256 datasheet

 ..1. Size:92K  sanyo
2sj256.pdf pdf_icon

2SJ256

Ordering number EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ256] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO

 ..2. Size:193K  inchange semiconductor
2sj256.pdf pdf_icon

2SJ256

isc P-Channel MOSFET Transistor 2SJ256 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(

 9.1. Size:93K  sanyo
2sj258.pdf pdf_icon

2SJ256

Ordering number EN4745 P-Channel Silicon MOSFET 2SJ258 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SJ258] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SJ258- applied equipment. High-density

 9.2. Size:99K  sanyo
2sj259.pdf pdf_icon

2SJ256

Ordering number EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ259] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ259-applied equipment

Otros transistores... 2SJ228, 2SJ229, 2SJ230, 2SJ231, 2SJ232, 2SJ233, 2SJ254, 2SJ255, SKD502T, 2SJ257, 2SJ258, 2SJ259, 2SJ597, 2SK1803, 2SK1806, 2SK1813, 2SK1833