2SJ256 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ256
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 1200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Paquete / Cubierta: TO220ML
Búsqueda de reemplazo de 2SJ256 MOSFET
2SJ256 Datasheet (PDF)
2sj256.pdf

Ordering number:EN4232P-Channel Silicon MOSFET2SJ256Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ256] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO
2sj256.pdf

isc P-Channel MOSFET Transistor 2SJ256DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationABSOLUTE MAXIMUM RATINGS(
2sj258.pdf

Ordering number:EN4745P-Channel Silicon MOSFET2SJ258Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SJ258] Surface mount type device making the following10.24.51.3possible. Reduction in the assembling time for 2SJ258-applied equipment. High-density
2sj259.pdf

Ordering number:EN4233P-Channel Silicon MOSFET2SJ259Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ259] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ259-applied equipment
Otros transistores... 2SJ228 , 2SJ229 , 2SJ230 , 2SJ231 , 2SJ232 , 2SJ233 , 2SJ254 , 2SJ255 , IRF9540N , 2SJ257 , 2SJ258 , 2SJ259 , 2SJ597 , 2SK1803 , 2SK1806 , 2SK1813 , 2SK1833 .
History: HFP6N60U | FQA24N50F109 | IRF7832PBF-1 | STD5NK52ZD-1 | IRFU3806PBF | LND04R035B | CS4N100F
History: HFP6N60U | FQA24N50F109 | IRF7832PBF-1 | STD5NK52ZD-1 | IRFU3806PBF | LND04R035B | CS4N100F



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