All MOSFET. 2SJ256 Datasheet

 

2SJ256 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ256

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 1200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO220ML

2SJ256 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ256 Datasheet (PDF)

1.1. 2sj256.pdf Size:92K _sanyo

2SJ256 2SJ256

Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ256] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

1.2. 2sj256.pdf Size:193K _inchange_semiconductor

2SJ256 2SJ256

isc P-Channel MOSFET Transistor 2SJ256 DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(

 5.1. 2sj259.pdf Size:99K _sanyo

2SJ256 2SJ256

Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ259] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ259-applied equipment. Hig

5.2. 2sj255.pdf Size:92K _sanyo

2SJ256 2SJ256

Ordering number:EN4744 P-Channel Silicon MOSFET 2SJ255 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ255] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-2

 5.3. 2sj257.pdf Size:96K _sanyo

2SJ256 2SJ256

Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ257] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ257-applied equipment. Hig

5.4. 2sj258.pdf Size:93K _sanyo

2SJ256 2SJ256

Ordering number:EN4745 P-Channel Silicon MOSFET 2SJ258 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SJ258] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SJ258- applied equipment. High-density surface m

 5.5. 2sj254.pdf Size:93K _sanyo

2SJ256 2SJ256

Ordering number:EN4231 P-Channel Silicon MOSFET 2SJ254 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ254] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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