2SJ256 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ256
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 1200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
Package: TO220ML
2SJ256 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ256 Datasheet (PDF)
1.1. 2sj256.pdf 
Size:92K _sanyo
Ordering number:EN4232 P-Channel Silicon MOSFET 2SJ256 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ256] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
5.1. 2sj258.pdf Size:93K _sanyo
Ordering number:EN4745 P-Channel Silicon MOSFET 2SJ258 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SJ258] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SJ258- applied equipment. High-density surface m
5.2. 2sj255.pdf Size:92K _sanyo
Ordering number:EN4744 P-Channel Silicon MOSFET 2SJ255 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ255] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-2
5.3. 2sj257.pdf Size:96K _sanyo
Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ257] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ257-applied equipment. Hig
5.4. 2sj254.pdf Size:93K _sanyo
Ordering number:EN4231 P-Channel Silicon MOSFET 2SJ254 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ254] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
5.5. 2sj259.pdf Size:99K _sanyo
Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ259] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ259-applied equipment. Hig
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
