2SJ259 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ259
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 1200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Paquete / Cubierta: SMP
Búsqueda de reemplazo de 2SJ259 MOSFET
2SJ259 Datasheet (PDF)
2sj259.pdf

Ordering number:EN4233P-Channel Silicon MOSFET2SJ259Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ259] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ259-applied equipment
2sj256.pdf

Ordering number:EN4232P-Channel Silicon MOSFET2SJ256Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ256] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO
2sj258.pdf

Ordering number:EN4745P-Channel Silicon MOSFET2SJ258Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SJ258] Surface mount type device making the following10.24.51.3possible. Reduction in the assembling time for 2SJ258-applied equipment. High-density
2sj257.pdf

Ordering number:EN4242P-Channel Silicon MOSFET2SJ257Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ257] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ257-applied equipment
Otros transistores... 2SJ231 , 2SJ232 , 2SJ233 , 2SJ254 , 2SJ255 , 2SJ256 , 2SJ257 , 2SJ258 , RFP50N06 , 2SJ597 , 2SK1803 , 2SK1806 , 2SK1813 , 2SK1833 , 2SK1834 , 2SK1839 , 2SK1840 .
History: HM120N04D | 2SK2207 | IRF4104PBF | 2SK1905 | IXFH28N60P3 | HM80N05K | HTD150P06
History: HM120N04D | 2SK2207 | IRF4104PBF | 2SK1905 | IXFH28N60P3 | HM80N05K | HTD150P06



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