2SJ259 - Даташиты. Аналоги. Основные параметры

Ordering number:EN4233P-Channel Silicon MOSFET2SJ259Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ259] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ259-applied equipment

Ordering number:EN4232P-Channel Silicon MOSFET2SJ256Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ256] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

Ordering number:EN4745P-Channel Silicon MOSFET2SJ258Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SJ258] Surface mount type device making the following10.24.51.3possible. Reduction in the assembling time for 2SJ258-applied equipment. High-density

Ordering number:EN4242P-Channel Silicon MOSFET2SJ257Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ257] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ257-applied equipment

Ordering number:EN4231P-Channel Silicon MOSFET2SJ254Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ254] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

Ordering number:EN4744P-Channel Silicon MOSFET2SJ255Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ255] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

isc P-Channel MOSFET Transistor 2SJ256DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationABSOLUTE MAXIMUM RATINGS(