2SJ340 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ340
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 70 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1 V
Tiempo de subida (tr): 150 nS
Conductancia de drenaje-sustrato (Cd): 1200 pF
Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
Paquete / Cubierta: SMP-FD
Búsqueda de reemplazo de MOSFET 2SJ340
2SJ340 Datasheet (PDF)
2sj340.pdf
Ordering number:ENN6420P-Channel Silicon MOSFET2SJ340Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2093A 4V drive.[2SJ340] Enables simplified fabrication, high-density mount-4.510.21.3ing, and miniaturization in end products due to thesurface mountable package.1.20.80.41 2
2sj346.pdf
2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1829 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA SC-7
2sj342.pdf
2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1825 Equivalent Circuit Maximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating
2sj345.pdf
2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1828 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC TO-236MODJEITA SC-59Characteristics Symbol Ratin
2sj347.pdf
2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1830 Marking Equivalent CircuitMaximum Ratings (Ta = = 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA
2sj349.pdf
2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 33 m (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.
2sj344.pdf
2SJ344 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1827 Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteri
2sj343.pdf
2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1826 Marking Equivalent CircuitMaximum Ratings (Ta = JEDEC TO-236MOD= 25C) ==JEITA SC-59Charac
2sj348.pdf
Ordering number:ENN6421P-Channel Silicon MOSFET2SJ348Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C 4V drive.[2SJ348]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220SpecificationsAbsolute Maximum Ratings at Ta = 25CParamete
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