2SJ340
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ340
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 150
nS
Cossⓘ -
Output Capacitance: 1200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package: SMP-FD
2SJ340
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ340
Datasheet (PDF)
..1. Size:42K sanyo
2sj340.pdf
Ordering number:ENN6420P-Channel Silicon MOSFET2SJ340Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2093A 4V drive.[2SJ340] Enables simplified fabrication, high-density mount-4.510.21.3ing, and miniaturization in end products due to thesurface mountable package.1.20.80.41 2
9.1. Size:307K toshiba
2sj346.pdf
2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1829 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA SC-7
9.2. Size:310K toshiba
2sj342.pdf
2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1825 Equivalent Circuit Maximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating
9.3. Size:333K toshiba
2sj345.pdf
2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1828 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC TO-236MODJEITA SC-59Characteristics Symbol Ratin
9.4. Size:300K toshiba
2sj347.pdf
2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1830 Marking Equivalent CircuitMaximum Ratings (Ta = = 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA
9.5. Size:401K toshiba
2sj349.pdf
2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 33 m (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.
9.6. Size:310K toshiba
2sj344.pdf
2SJ344 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1827 Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteri
9.7. Size:337K toshiba
2sj343.pdf
2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1826 Marking Equivalent CircuitMaximum Ratings (Ta = JEDEC TO-236MOD= 25C) ==JEITA SC-59Charac
9.8. Size:39K sanyo
2sj348.pdf
Ordering number:ENN6421P-Channel Silicon MOSFET2SJ348Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2052C 4V drive.[2SJ348]10.24.53.65.11.31.20.80.41 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220SpecificationsAbsolute Maximum Ratings at Ta = 25CParamete
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