2SJ383 Todos los transistores

 ..1. Size:110K  sanyo
 2sj383.pdf

Ordering number EN5297A P-Channel Silicon MOSFET 2SJ383 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SJ383] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Gate 0.6 0.5 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ383] 6.5 2.3 5.0 0.5 4 0.

 ..2. Size:838K  cn vbsemi
 2sj383.pdf

2SJ383 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-Chan

 9.1. Size:320K  toshiba
 2sj380.pdf

 9.2. Size:96K  sanyo
 2sj382.pdf

Ordering number EN5057 P-Channel Silicon MOSFET 2SJ382 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SJ382] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Gate 0.6 0.5 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ382] 6.5 2.3 5.0 0.5 4 0.5

 9.3. Size:106K  sanyo
 2sj381.pdf

Ordering number EN5296A P-Channel Silicon MOSFET 2SJ381 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SJ381] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C P

 9.4. Size:88K  renesas
 2sj387.pdf

2SJ387(L), 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZD-B RENESAS Pack

 9.5. Size:101K  renesas
 rej03g0862 2sj387lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:48K  hitachi
 2sj389l-s.pdf

2SJ389 L , 2SJ389 S Silicon P Channel MOS FET Application DPAK 2 4 High speed power switching 4 Features 1 2 3 Low on resistance 2, 4 High speed switching 1 2 3 Low drive current 4 V gate drive device can be driven from 1 5 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source Avalanche Ratings 3 4. Drai

 9.7. Size:832K  cn vbsemi
 2sj389s.pdf

2SJ389S www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbo

 9.8. Size:224K  inchange semiconductor
 2sj380.pdf

isc P-Channel MOSFET Transistor 2SJ380 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(

 9.9. Size:248K  inchange semiconductor
 2sj389s.pdf

isc P-Channel MOSFET Transistor 2SJ389S FEATURES Static drain-source on-resistance RDS(on) 135m (@V = -10V; I = -5A) GS D High speed switching Low drive current 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER