All MOSFET. 2SJ383 Datasheet

 

2SJ383 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ383

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 12 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 170 nS

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm

Package: TP

2SJ383 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ383 Datasheet (PDF)

1.1. 2sj383.pdf Size:110K _sanyo

2SJ383
2SJ383

Ordering number:EN5297A P-Channel Silicon MOSFET 2SJ383 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SJ383] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ383] 6.5 2.3 5.0 0.5 4 0.5 0.8

5.1. 2sj389l-s.pdf Size:48K _upd

2SJ383
2SJ383

2SJ389 L , 2SJ389 S Silicon P Channel MOS FET Application DPAK–2 4 High speed power switching 4 Features 1 2 3 • Low on–resistance 2, 4 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 4. Drai

5.2. 2sj380.pdf Size:320K _toshiba

2SJ383
2SJ383



 5.3. 2sj381.pdf Size:106K _sanyo

2SJ383
2SJ383

Ordering number:EN5296A P-Channel Silicon MOSFET 2SJ381 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SJ381] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

5.4. 2sj382.pdf Size:96K _sanyo

2SJ383
2SJ383

Ordering number:EN5057 P-Channel Silicon MOSFET 2SJ382 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 2.5V drive. [2SJ382] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ382] 6.5 2.3 5.0 0.5 4 0.5 0.85

 5.5. 2sj387.pdf Size:88K _renesas

2SJ383
2SJ383

2SJ387(L), 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: P

5.6. rej03g0862 2sj387lsds.pdf Size:101K _renesas

2SJ383
2SJ383

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

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