2SK1900 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1900
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SMP

Búsqueda de reemplazo de MOSFET 2SK1900

2SK1900 Datasheet (PDF)

..1. Size:99K sanyo
2sk1900.pdf

Ordering number:EN4210N-Channel Silicon MOSFET2SK1900Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SK1900] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1900-applied equipm

8.1. Size:94K sanyo
2sk1908.pdf

Ordering number:EN4650N-Channel Silicon MOSFET2SK1908Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SK1908] Surface mount type device making the following10.24.51.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1908-applied equipm

8.2. Size:95K sanyo
2sk1906.pdf

Ordering number:EN4225N-Channel Silicon MOSFET2SK1906Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1906] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : T

8.3. Size:98K sanyo
2sk1909.pdf

Ordering number:EN4227N-Channel Silicon MOSFET2SK1909Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SK1909] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1909-applied equipm

8.4. Size:92K sanyo
2sk1905.pdf

Ordering number:EN4649N-Channel Silicon MOSFET2SK1905Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1905] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANY

8.5. Size:96K sanyo
2sk1907.pdf

Ordering number:EN4226N-Channel Silicon MOSFET2SK1907Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SK1907] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1907-applied equipm

8.6. Size:95K sanyo
2sk1904.pdf

Ordering number:EN4211N-Channel Silicon MOSFET2SK1904Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1904] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : T

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