2SK2347 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2347

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 160 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 200 nS

Cossⓘ - Capacitancia de salida: 750 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO3JML

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2SK2347 datasheet

 ..1. Size:55K  sanyo
 2sk2347.pdf pdf_icon

2SK2347

Ordering number EN5424A N-Channel Silicon MOSFET 2SK2347 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2347] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol

 8.1. Size:73K  1
 2sk2341.pdf pdf_icon

2SK2347

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2341 is N-channel Power MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-state Resistance RDS(on) = 0.26 MAX. (VGS = 10 V, ID =

 8.2. Size:55K  sanyo
 2sk2348.pdf pdf_icon

2SK2347

Ordering number EN5415A N-Channel Silicon MOSFET 2SK2348 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2348] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol

 8.3. Size:54K  sanyo
 2sk2349.pdf pdf_icon

2SK2347

Ordering number EN5315A N-Channel Silicon MOSFET 2SK2349 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2349] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol

MOSTRAR MÁS

Otros transistores... 2SK1967, 2SK198, 2SK1980, 2SK2326, 2SK2327, 2SK2339, 2SK2340, 2SK2342, 10N60, 2SK2348, 2SK2349, 2SK2374, 2SK2375, 2SK2377, 2SK2378, 2SK2379, 2SK2380