All MOSFET. 2SK2347 Datasheet

 

2SK2347 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2347
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO3JML

 2SK2347 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2347 Datasheet (PDF)

 ..1. Size:55K  sanyo
 2sk2347.pdf

2SK2347 2SK2347

Ordering number : EN5424AN-Channel Silicon MOSFET2SK2347High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2347]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

 8.1. Size:73K  1
 2sk2341.pdf

2SK2347 2SK2347

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2341SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2341 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-state ResistanceRDS(on) = 0.26 MAX. (VGS = 10 V, ID =

 8.2. Size:55K  sanyo
 2sk2348.pdf

2SK2347 2SK2347

Ordering number : EN5415AN-Channel Silicon MOSFET2SK2348High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2348]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

 8.3. Size:54K  sanyo
 2sk2349.pdf

2SK2347 2SK2347

Ordering number : EN5315AN-Channel Silicon MOSFET2SK2349High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2349]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

 8.4. Size:31K  panasonic
 2sk2340.pdf

2SK2347 2SK2347

Power F-MOS FETs 2SK23402SK2340Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipm

 8.5. Size:24K  panasonic
 2sk2342.pdf

2SK2347

Power F-MOS FETs 2SK23422SK2342Silicon N-Channel MOSUnit : mmFor motor drive6.5 0.1For DC-DC converter5.3 0.14.35 0.13.0 0.1 FeaturesLow ON-resistance RDS(on)High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)Parameter Symbol Rating Unit1 : Gate1 2 32 : DrainDrain-Source breakd

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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