2SK2349 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2349
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Paquete / Cubierta: TO3JML
- Selección de transistores por parámetros
2SK2349 Datasheet (PDF)
2sk2349.pdf

Ordering number : EN5315AN-Channel Silicon MOSFET2SK2349High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2349]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol
2sk2341.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2341SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2341 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-state ResistanceRDS(on) = 0.26 MAX. (VGS = 10 V, ID =
2sk2348.pdf

Ordering number : EN5415AN-Channel Silicon MOSFET2SK2348High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2348]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol
2sk2347.pdf

Ordering number : EN5424AN-Channel Silicon MOSFET2SK2347High-Voltage, High-SpeedSwitching ApplicationsFeaturesPackage Dimensions Low ON resistance, ultrahigh-speed switching.unit: mm High reliability (Adoption of HVP process).2131-TO-3JML[2SK2347]1 : Gate2 : Drain3 : SourceSANYO: TO-3JMLSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CS7416 | IRF624A | BUK7Y43-60E | IXFN64N60P | APT1201R5BVFRG | WNM3017 | SMP40N10
History: CS7416 | IRF624A | BUK7Y43-60E | IXFN64N60P | APT1201R5BVFRG | WNM3017 | SMP40N10



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