2SK2349 PDF and Equivalents Search

Ordering number EN5315A N-Channel Silicon MOSFET 2SK2349 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2349] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol ... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2341 is N-channel Power MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-state Resistance RDS(on) = 0.26 MAX. (VGS = 10 V, ID = ... See More ⇒

Ordering number EN5415A N-Channel Silicon MOSFET 2SK2348 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2348] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol ... See More ⇒

Ordering number EN5424A N-Channel Silicon MOSFET 2SK2347 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2347] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol ... See More ⇒

Power F-MOS FETs 2SK2340 2SK2340 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipm... See More ⇒

Power F-MOS FETs 2SK2342 2SK2342 Silicon N-Channel MOS Unit mm For motor drive 6.5 0.1 For DC-DC converter 5.3 0.1 4.35 0.1 3.0 0.1 Features Low ON-resistance RDS(on) High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) Parameter Symbol Rating Unit 1 Gate 1 2 3 2 Drain Drain-Source breakd... See More ⇒