2SJ485 Todos los transistores

 ..1. Size:43K  sanyo
 2sj485.pdf

Ordering number ENN6434 P-Channel Silicon MOSFET 2SJ485 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ485] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ485] 6.5 2.3 5.0 0.5 4 0.5

 ..2. Size:832K  cn vbsemi
 2sj485.pdf

2SJ485 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol

 9.1. Size:47K  1
 2sj483.pdf

2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features Low on-resistance RDS(on) = 0.08 typ (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitance ID = 5 A Outline TO-92MOD. D G 1. Source 3 2 2. Drain 1 3. Gate S 2SJ483 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Dra

 9.2. Size:92K  renesas
 rej03g0868 2sj484ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:79K  renesas
 2sj484.pdf

2SJ484 Silicon P Channel MOS FET REJ03G0868-0300 (Previous ADE-208-501A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.18 typ. (at VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PLZZ0004CA-A R (Package name UPAK )

 9.4. Size:79K  renesas
 2sj486.pdf

2SJ486 Silicon P Channel MOS FET REJ03G0869-0300 (Previous ADE-208-512A) Rev.3.00 Sep 07, 2005 Description Low frequency power switching Features Low on-resistance RDS (on) = 0.5 typ. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive devices. Small package (MPAK). Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) D 3 1. Source G

 9.5. Size:192K  hitachi
 2sj48 2sj49 2sj50.pdf

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