2SJ485 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ485
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: 1 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 120 pF
Maximum Drain-Source On-State Resistance (Rds): 0.33 Ohm
Package: TP
2SJ485 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ485 Datasheet (PDF)
2sj485.pdf
Ordering number:ENN6434P-Channel Silicon MOSFET2SJ485Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ485]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ485]6.5 2.35.0 0.540.5
2sj485.pdf
2SJ485www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol
2sj483.pdf
2SJ483Silicon P Channel MOS FETHigh Speed Power SwitchingADE-208-5191st. EditionFeatures Low on-resistanceRDS(on) = 0.08 typ (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitanceID = 5 AOutlineTO-92MOD.DG1. Source322. Drain13. GateS2SJ483Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDra
rej03g0868 2sj484ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj484.pdf
2SJ484 Silicon P Channel MOS FET REJ03G0868-0300 (Previous: ADE-208-501A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.18 typ. (at VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-AR(Package name: UPAK )
2sj486.pdf
2SJ486 Silicon P Channel MOS FET REJ03G0869-0300 (Previous: ADE-208-512A) Rev.3.00 Sep 07, 2005 Description Low frequency power switching Features Low on-resistance RDS (on) = 0.5 typ. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive devices. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31. SourceG
2sj48 2sj49 2sj50.pdf
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
