2SJ579 Todos los transistores

Ordering number ENN6384 P-Channel Silicon MOSFET 2SJ579 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ579] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C Par

Ordering number ENN6411A P-Channel Silicon MOSFET 2SJ577 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ577] 4.5 10.2 1.3 1.2 0.8 0.4 1 2 3 1 Gate 2 Drain 3 Source 2.55 2.55 SANYO SMP unit mm 2090A [2SJ577] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2

Ordering number ENN6408 P-Channel Silicon MOSFET 2SJ578 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ578] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 0.75 1 Gate 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol C

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM