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2SJ579 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ579

Código: JQ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.5 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 1.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 35 pF

Resistencia drenaje-fuente RDS(on): 0.8 Ohm

Empaquetado / Estuche: PCP

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2SJ579 Datasheet (PDF)

1.1. 2sj579.pdf Size:42K _sanyo

2SJ579
2SJ579

Ordering number:ENN6384 P-Channel Silicon MOSFET 2SJ579 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ579] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter

5.1. 2sj578.pdf Size:42K _sanyo

2SJ579
2SJ579

Ordering number:ENN6408 P-Channel Silicon MOSFET 2SJ578 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ578] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditio

5.2. 2sj577.pdf Size:41K _sanyo

2SJ579
2SJ579

Ordering number:ENN6411A P-Channel Silicon MOSFET 2SJ577 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ577] 4.5 10.2 1.3 1.2 0.8 0.4 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : SMP unit:mm 2090A [2SJ577] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2 0.4

 5.3. 2sj574.pdf Size:56K _renesas

2SJ579
2SJ579

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.4. 2sj576.pdf Size:43K _renesas

2SJ579
2SJ579

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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