2SJ579 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ579
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: PCP

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2SJ579 Datasheet (PDF)

..1. Size:42K sanyo
2sj579.pdf

Ordering number:ENN6384P-Channel Silicon MOSFET2SJ579Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ579]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPar

9.1. Size:41K sanyo
2sj577.pdf

Ordering number:ENN6411AP-Channel Silicon MOSFET2SJ577Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ577]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55 SANYO : SMPunit:mm2090A[2SJ577]10.24.51.31 2 30 to 0.30.81.2

9.2. Size:42K sanyo
2sj578.pdf

Ordering number:ENN6408P-Channel Silicon MOSFET2SJ578Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ578]4.51.51.60.4 0.53 2 10.41.53.00.751 : Gate2 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol C

9.3. Size:56K renesas
2sj574.pdf

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

9.4. Size:43K renesas
2sj576.pdf