2SJ579 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ579
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 35 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: PCP
2SJ579 Datasheet (PDF)
2sj579.pdf
Ordering number:ENN6384P-Channel Silicon MOSFET2SJ579Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ579]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPar
2sj577.pdf
Ordering number:ENN6411AP-Channel Silicon MOSFET2SJ577Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ577]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55 SANYO : SMPunit:mm2090A[2SJ577]10.24.51.31 2 30 to 0.30.81.2
2sj578.pdf
Ordering number:ENN6408P-Channel Silicon MOSFET2SJ578Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ578]4.51.51.60.4 0.53 2 10.41.53.00.751 : Gate2 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol C
2sj574.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sj576.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918