2SJ585LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ585LS

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 6.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 60 nS

Conductancia de drenaje-sustrato (Cd): 190 pF

Resistencia drenaje-fuente RDS(on): 0.7 Ohm

Empaquetado / Estuche: TO220FI

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2SJ585LS Datasheet (PDF)

1.1. 2sj585ls.pdf Size:42K _sanyo

Ordering number:ENN6412 P-Channel Silicon MOSFET 2SJ585LS Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON-resistance. unit:mm � Ultrahigh-speed switching. 2078B � Micaless package facilitating mounting. [2SJ585LS] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220FI-LS Specifications Absolute Maxim

5.1. 2sj583ls.pdf Size:42K _sanyo

Ordering number:ENN6409 P-Channel Silicon MOSFET 2SJ583LS Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON-resistance. unit:mm � Ultrahigh-speed switching. 2078B � Micaless package facilitating mounting. [2SJ583LS] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220FI-LS Specifications Absolute Maxim

5.2. 2sj584ls.pdf Size:42K _sanyo

Ordering number:ENN6410 P-Channel Silicon MOSFET 2SJ584LS Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON-resistance. unit:mm � Ultrahigh-speed switching. 2078B � Micaless package facilitating mounting. [2SJ584LS] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220FI-LS Specifications Absolute Maxim

5.3. 2sj580.pdf Size:29K _sanyo

Ordering number : ENN6669 2SJ580 P-Channel Silicon MOSFET 2SJ580 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON-resistanse. unit : mm � Ultrahigh-speed switching. 2062A � 4V drive. [2SJ580] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta=25�C Par

5.4. 2sj589ls.pdf Size:33K _sanyo

Ordering number : ENN7148 2SJ589LS P-Channel Silicon MOSFET 2SJ589LS DC / DC Converter Applications Features Package Dimensions � Low ON-resistance. unit : mm � 4V drive. 2078C [2SJ589LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Gate 2 : Drain 3 : Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25�C SANYO : TO-220FI(LS) Parameter Symbol Conditions Ratin

5.5. 2sj581.pdf Size:37K _nec

PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ581 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ581 is P-Channel DMOS Field Effect Transistor that PART NUMBER PACKAGE features a low on-resistance and excellent switching 2SJ581 MP-10 characteristics, designed for high current switching applications such as DC to DC converter an

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