Справочник MOSFET. 2SJ585LS

 

2SJ585LS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SJ585LS

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 30 W

Предельно допустимое напряжение сток-исток (Uds): 250 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 6.5 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 60 ns

Выходная емкость (Cd): 190 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.7 Ohm

Тип корпуса: TO220FI

Аналог (замена) для 2SJ585LS

 

 

2SJ585LS Datasheet (PDF)

1.1. 2sj585ls.pdf Size:42K _sanyo

2SJ585LS
2SJ585LS

Ordering number:ENN6412 P-Channel Silicon MOSFET 2SJ585LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2078B Micaless package facilitating mounting. [2SJ585LS] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220FI-LS Specifications Absolute Maxim

5.1. 2sj589ls.pdf Size:33K _sanyo

2SJ585LS
2SJ585LS

Ordering number : ENN7148 2SJ589LS P-Channel Silicon MOSFET 2SJ589LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C [2SJ589LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Gate 2 : Drain 3 : Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25C SANYO : TO-220FI(LS) Parameter Symbol Conditions Ratin

5.2. 2sj583ls.pdf Size:42K _sanyo

2SJ585LS
2SJ585LS

Ordering number:ENN6409 P-Channel Silicon MOSFET 2SJ583LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2078B Micaless package facilitating mounting. [2SJ583LS] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220FI-LS Specifications Absolute Maxim

 5.3. 2sj584ls.pdf Size:42K _sanyo

2SJ585LS
2SJ585LS

Ordering number:ENN6410 P-Channel Silicon MOSFET 2SJ584LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2078B Micaless package facilitating mounting. [2SJ584LS] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220FI-LS Specifications Absolute Maxim

5.4. 2sj580.pdf Size:29K _sanyo

2SJ585LS
2SJ585LS

Ordering number : ENN6669 2SJ580 P-Channel Silicon MOSFET 2SJ580 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistanse. unit : mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ580] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta=25C Par

 5.5. 2sj581.pdf Size:37K _nec

2SJ585LS
2SJ585LS

PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ581 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ581 is P-Channel DMOS Field Effect Transistor that PART NUMBER PACKAGE features a low on-resistance and excellent switching 2SJ581 MP-10 characteristics, designed for high current switching applications such as DC to DC converter an

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top