SSF1010 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF1010
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 205 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 67 nS
Cossⓘ - Capacitancia de salida: 312 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de SSF1010 MOSFET
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SSF1010 datasheet
ssf1010.pdf
SSF1010 Main Product Characteristics VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
ssf1010a.pdf
SSF1010A Main Product Characteristics VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
ssf1016d.pdf
SSF1016D Feathers ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description The SSF1016D is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par
ssf1016a.pdf
SSF1016A Main Product Characteristics VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
Otros transistores... 2N7002KB, 2N7002KG8, SSF0115, SSF1006, SSF1006A, SSF1006H, SSF1007, SSF1009, BS170, SSF1010A, SSF1016, SSF1016A, SSF1016D, SSF1020, SSF1020A, SSF1020D, SSF1030
History: CS110N03A3 | HM2N10 | UF830KL-TN3-R
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