SSF1010A Todos los transistores

 

SSF1010A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF1010A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 205 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 67 nS
   Cossⓘ - Capacitancia de salida: 312 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: D2PAK
 

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SSF1010A PDF Specs

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SSF1010A

SSF1010A Main Product Characteristics VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov... See More ⇒

 7.1. Size:417K  silikron
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SSF1010A

SSF1010 Main Product Characteristics VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17... See More ⇒

 8.1. Size:851K  silikron
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SSF1010A

SSF1016D Feathers ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description The SSF1016D is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par... See More ⇒

 8.2. Size:544K  silikron
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SSF1010A

SSF1016A Main Product Characteristics VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover... See More ⇒

Otros transistores... 2N7002KG8 , SSF0115 , SSF1006 , SSF1006A , SSF1006H , SSF1007 , SSF1009 , SSF1010 , 4N60 , SSF1016 , SSF1016A , SSF1016D , SSF1020 , SSF1020A , SSF1020D , SSF1030 , SSF1030B .

History: CEP140N10 | VBJ1695 | IXFP30N60X | 11N40

 

 
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