SSF1010A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF1010A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 205 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 100 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 120 nC
Tiempo de elevación (tr): 67 nS
Conductancia de drenaje-sustrato (Cd): 312 pF
Resistencia drenaje-fuente RDS(on): 0.01 Ohm
Empaquetado / Estuche: D2PAK
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SSF1010A Datasheet (PDF)
1.1. ssf1010a.pdf 
Size:384K _silikron
SSF1010A Main Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin D2PAK Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
3.1. ssf1010.pdf Size:417K _silikron
SSF1010 Main Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin TO220 Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
4.1. ssf1016.pdf Size:731K _silikron
SSF1016 Feathers: ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16mΩ (Max.) Fully characterized avalanche voltage and current Description: The SSF1016 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical
4.2. ssf1016a.pdf Size:544K _silikron
SSF1016A Main Product Characteristics: VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A ① Marking and pin D2PAK Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
4.3. ssf1016d.pdf Size:851K _silikron
SSF1016D Feathers: ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16mΩ (Max.) Fully characterized avalanche voltage and current Description: The SSF1016D is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
