SSF1010A Todos los transistores

 

SSF1010A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF1010A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 205 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 120 nC

Tiempo de elevación (tr): 67 nS

Conductancia de drenaje-sustrato (Cd): 312 pF

Resistencia drenaje-fuente RDS(on): 0.01 Ohm

Empaquetado / Estuche: D2PAK

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SSF1010A Datasheet (PDF)

1.1. ssf1010a.pdf Size:384K _silikron

SSF1010A
SSF1010A

 SSF1010A  Main Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin D2PAK Schematic diagram  Assignment  Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recov

3.1. ssf1010.pdf Size:417K _silikron

SSF1010A
SSF1010A

 SSF1010  Main Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A Marking and pin TO220 Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

 4.1. ssf1016d.pdf Size:851K _silikron

SSF1010A
SSF1010A

SSF1016D Feathers: ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16mΩ (Max.) Fully characterized avalanche voltage and current Description: The SSF1016D is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

4.2. ssf1016a.pdf Size:544K _silikron

SSF1010A
SSF1010A

 SSF1016A  Main Product Characteristics: VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A ① Marking and pin D2PAK Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

 4.3. ssf1016.pdf Size:731K _silikron

SSF1010A
SSF1010A

SSF1016 Feathers: ID =75A  Advanced trench process technology BV=100V  avalanche energy, 100% test Rdson=16mΩ (Max.)  Fully characterized avalanche voltage and current Description: The SSF1016 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical

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