SSF1010A - Даташиты. Аналоги. Основные параметры

SSF1010AMain Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.)ID 100AMarking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

SSF1010Main Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.)ID 100AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

SSF1016D Feathers: ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description: The SSF1016D is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

SSF1016AMain Product Characteristics: VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A Marking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

SSF1016 Feathers: ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description: The SSF1016 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical