SSF10N90F1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF10N90F1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 106 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm

Encapsulados: TO3P

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SSF10N90F1 datasheet

 ..1. Size:333K  silikron
 ssf10n90f1.pdf pdf_icon

SSF10N90F1

SSF10N90F1 Main Product Characteristics V 900V DSS R (on) 0.85 (typ.) DS I 10A D Marking and pin TO-3P Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Low On Resistance Low Gate Charge Fast switching and reverse body recovery Description It utilizes the latest processing techniques to achieve the high cell density a

 6.1. Size:579K  samsung
 ssf10n90a.pdf pdf_icon

SSF10N90F1

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 0.938 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 8.1. Size:255K  fairchild semi
 ssf10n60a.pdf pdf_icon

SSF10N90F1

SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

 8.2. Size:577K  samsung
 ssf10n80a.pdf pdf_icon

SSF10N90F1

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 0.746 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

MOSTRAR MÁS

Otros transistores... SSF1030B, SSF1030D, SSF1090, SSF1090A, SSF1090D, SSF10N60, SSF10N60F, SSF10N65, 8N60, SSF1109, SSF1116, SSF1116A, SSF1122, SSF1122D, SSF11NS60, SSF11NS60D, SSF11NS60F