Справочник MOSFET. SSF10N90F1

 

SSF10N90F1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF10N90F1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 66 nC
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 106 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.3 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для SSF10N90F1

 

 

SSF10N90F1 Datasheet (PDF)

 ..1. Size:333K  silikron
 ssf10n90f1.pdf

SSF10N90F1 SSF10N90F1

SSF10N90F1Main Product Characteristics:V 900VDSSR (on) 0.85(typ.)DSI 10A DMarking and pinTO-3PSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Low On Resistance Low Gate Charge Fast switching and reverse body recoveryDescription:It utilizes the latest processing techniques to achieve the high cell density a

 6.1. Size:579K  samsung
 ssf10n90a.pdf

SSF10N90F1 SSF10N90F1

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 8.1. Size:255K  fairchild semi
 ssf10n60a.pdf

SSF10N90F1 SSF10N90F1

SSF10N60AAdvanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.9 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

 8.2. Size:577K  samsung
 ssf10n80a.pdf

SSF10N90F1 SSF10N90F1

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 0.746 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 8.3. Size:532K  silikron
 ssf10n65.pdf

SSF10N90F1 SSF10N90F1

SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.4. Size:531K  silikron
 ssf10n60.pdf

SSF10N90F1 SSF10N90F1

SSF10N60 Main Product Characteristics: VDSS 600V RDS(on) 0.69 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.5. Size:528K  silikron
 ssf10n60f.pdf

SSF10N90F1 SSF10N90F1

SSF10N60F Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

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