SSF11NS65 Todos los transistores

 

SSF11NS65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF11NS65

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 162 W

Tensión drenaje-fuente (Vds): 680 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9.45 nS

Conductancia de drenaje-sustrato (Cd): 78.06 pF

Resistencia drenaje-fuente RDS(on): 0.41 Ohm

Empaquetado / Estuche: TO220

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SSF11NS65 Datasheet (PDF)

1.1. sssf11ns65uf.pdf Size:434K _upd-mosfet

SSF11NS65
SSF11NS65

 SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

1.2. ssf11ns65u.pdf Size:479K _silikron

SSF11NS65
SSF11NS65

 SSF11NS65U Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220 S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65U series MOSFETs is a new te

 1.3. ssf11ns65.pdf Size:373K _silikron

SSF11NS65
SSF11NS65

 SSF11NS65  Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Marking and pin TO220 Schematic diagram  Assignment  Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65 series MOSFETs is a new technology. which

1.4. ssf11ns65f.pdf Size:379K _silikron

SSF11NS65
SSF11NS65

 SSF11NS65F  Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Marking and pin TO220F Schematic diagram  Assignment  Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65F series MOSFETs is a new technology. wh

 1.5. ssf11ns65uf.pdf Size:495K _silikron

SSF11NS65
SSF11NS65

 SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

1.6. ssf11ns65ud.pdf Size:472K _silikron

SSF11NS65
SSF11NS65

 SSF11NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.33Ω (typ.) ID 11A Marking and Pin TO-252 (DPAK) S che mati c Diag r am Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65UD series MOSFETs is a new techno

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