Справочник MOSFET. SSF11NS65

 

SSF11NS65 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF11NS65
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 162 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 680 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 9.45 ns
   Cossⓘ - Выходная емкость: 78.06 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.41 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для SSF11NS65

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF11NS65 Datasheet (PDF)

 ..1. Size:373K  silikron
ssf11ns65.pdfpdf_icon

SSF11NS65

SSF11NS65Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.)ID 11AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65 series MOSFETs is a new technology. which

 0.1. Size:495K  silikron
ssf11ns65uf.pdfpdf_icon

SSF11NS65

SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

 0.2. Size:434K  silikron
sssf11ns65uf.pdfpdf_icon

SSF11NS65

SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

 0.3. Size:379K  silikron
ssf11ns65f.pdfpdf_icon

SSF11NS65

SSF11NS65FMain Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.)ID 11AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65F series MOSFETs is a new technology. wh

Другие MOSFET... SSF1116 , SSF1116A , SSF1122 , SSF1122D , SSF11NS60 , SSF11NS60D , SSF11NS60F , SSF11NS60UF , IRF1405 , SSF11NS65F , SSF11NS65U , SSF11NS65UD , SSF11NS70UF , SSF11NS70UG , SSF1221J2 , SSF12N60F , SSF12N65F .

History: VBQF1310 | HAT2099H | CEB75N06 | S-LP1480WT1G | PHP83N03LT | VS6640AC | YJL3134K

 

 
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