SSF11NS65U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF11NS65U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 34 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO220

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SSF11NS65U datasheet

 ..1. Size:479K  silikron
 ssf11ns65u.pdf pdf_icon

SSF11NS65U

SSF11NS65U Main Product Characteristics VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220 S che mati c di ag ra m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65U series MOSFETs is a new te

 0.1. Size:495K  silikron
 ssf11ns65uf.pdf pdf_icon

SSF11NS65U

SSF11NS65UF Main Product Characteristics VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65UF series MOSFETs is a new

 0.2. Size:434K  silikron
 sssf11ns65uf.pdf pdf_icon

SSF11NS65U

SSF11NS65UF Main Product Characteristics VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65UF series MOSFETs is a new

 0.3. Size:472K  silikron
 ssf11ns65ud.pdf pdf_icon

SSF11NS65U

SSF11NS65UD Main Product Characteristics VDSS 650V RDS(on) 0.33 (typ.) ID 11A Marking and Pin TO-252 (DPAK) S che mati c Diag r am Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65UD series MOSFETs is a new techno

MOSTRAR MÁS

Otros transistores... SSF1122, SSF1122D, SSF11NS60, SSF11NS60D, SSF11NS60F, SSF11NS60UF, SSF11NS65, SSF11NS65F, IRF9640, SSF11NS65UD, SSF11NS70UF, SSF11NS70UG, SSF1221J2, SSF12N60F, SSF12N65F, SSF1341, SSF13N50