SSF11NS70UF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF11NS70UF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 30 W
Tensión drenaje-fuente (Vds): 700 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 11 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 6.7 nS
Conductancia de drenaje-sustrato (Cd): 33 pF
Resistencia drenaje-fuente RDS(on): 0.45 Ohm
Empaquetado / Estuche: TO220F
Búsqueda de reemplazo de MOSFET SSF11NS70UF
SSF11NS70UF Datasheet (PDF)
1.1. ssf11ns70uf.pdf 
Size:453K _silikron
SSF11NS70UF Main Product Characteristics: VDSS 700V RDS(on) 0.4Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS70UF series MOSFETs is a new
1.2. ssf11ns70ug.pdf Size:434K _silikron
SSF11NS70UG Main Product Characteristics VDSS 700V RDS(on) 0.39Ω (typ.) ID 11A Marking and Pin S che mati c Diag r am TO-251 (IPAK) Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS70UG series MOSFETs is a new technol
3.1. sssf11ns65uf.pdf Size:434K _upd-mosfet
SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new
3.2. ssf11ns65u.pdf Size:479K _silikron
SSF11NS65U Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220 S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65U series MOSFETs is a new te
3.3. ssf11ns65.pdf Size:373K _silikron
SSF11NS65 Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Marking and pin TO220 Schematic diagram Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65 series MOSFETs is a new technology. which
3.4. ssf11ns65f.pdf Size:379K _silikron
SSF11NS65F Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Marking and pin TO220F Schematic diagram Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65F series MOSFETs is a new technology. wh
3.5. ssf11ns60d.pdf Size:484K _silikron
SSF11NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Ma r ki ng a nd pin TO-252 S che ma ti c di ag r a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60D series MOSFETs is a
3.6. ssf11ns60f.pdf Size:447K _silikron
SSF11NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60F series MOSFETs is a new technol
3.7. ssf11ns60.pdf Size:468K _silikron
SSF11NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60 series MOSFETs is a new t
3.8. ssf11ns60uf.pdf Size:438K _silikron
SSF11NS60UF Main Product Characteristics: VDSS 600V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60UF series MOSFETs is a new
3.9. ssf11ns65uf.pdf Size:495K _silikron
SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new
3.10. ssf11ns65ud.pdf Size:472K _silikron
SSF11NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.33Ω (typ.) ID 11A Marking and Pin TO-252 (DPAK) S che mati c Diag r am Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UD series MOSFETs is a new techno
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