SSF11NS70UG Todos los transistores

 

SSF11NS70UG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF11NS70UG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 700 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 6.9 nS

Conductancia de drenaje-sustrato (Cd): 31 pF

Resistencia drenaje-fuente RDS(on): 0.45 Ohm

Empaquetado / Estuche: IPAK

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SSF11NS70UG Datasheet (PDF)

1.1. ssf11ns70uf.pdf Size:453K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS70UF Main Product Characteristics: VDSS 700V RDS(on) 0.4Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS70UF series MOSFETs is a new

1.2. ssf11ns70ug.pdf Size:434K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS70UG Main Product Characteristics VDSS 700V RDS(on) 0.39Ω (typ.) ID 11A Marking and Pin S che mati c Diag r am TO-251 (IPAK) Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description The SSF11NS70UG series MOSFETs is a new technol

 3.1. sssf11ns65uf.pdf Size:434K _upd-mosfet

SSF11NS70UG
SSF11NS70UG

 SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

3.2. ssf11ns60uf.pdf Size:438K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS60UF Main Product Characteristics: VDSS 600V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60UF series MOSFETs is a new

 3.3. ssf11ns65uf.pdf Size:495K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

3.4. ssf11ns60.pdf Size:468K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60 series MOSFETs is a new t

 3.5. ssf11ns60d.pdf Size:484K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Ma r ki ng a nd pin TO-252 S che ma ti c di ag r a m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60D series MOSFETs is a

3.6. ssf11ns65u.pdf Size:479K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS65U Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220 S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65U series MOSFETs is a new te

3.7. ssf11ns65.pdf Size:373K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS65  Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Marking and pin TO220 Schematic diagram  Assignment  Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65 series MOSFETs is a new technology. which

3.8. ssf11ns60f.pdf Size:447K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60F series MOSFETs is a new technol

3.9. ssf11ns65f.pdf Size:379K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS65F  Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Marking and pin TO220F Schematic diagram  Assignment  Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65F series MOSFETs is a new technology. wh

3.10. ssf11ns65ud.pdf Size:472K _silikron

SSF11NS70UG
SSF11NS70UG

 SSF11NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.33Ω (typ.) ID 11A Marking and Pin TO-252 (DPAK) S che mati c Diag r am Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65UD series MOSFETs is a new techno

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