SSF11NS70UG
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSF11NS70UG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 11
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 6.9
ns
Cossⓘ - Выходная емкость: 31
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.45
Ohm
Тип корпуса:
IPAK
Аналог (замена) для SSF11NS70UG
-
подбор ⓘ MOSFET транзистора по параметрам
SSF11NS70UG
Datasheet (PDF)
..1. Size:434K silikron
ssf11ns70ug.pdf 

SSF11NS70UG Main Product Characteristics VDSS 700V RDS(on) 0.39 (typ.) ID 11A Marking and Pin S che mati c Diag r am TO-251 (IPAK) Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS70UG series MOSFETs is a new technol
4.1. Size:453K silikron
ssf11ns70uf.pdf 

SSF11NS70UF Main Product Characteristics: VDSS 700V RDS(on) 0.4 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS70UF series MOSFETs is a new
7.1. Size:468K silikron
ssf11ns60.pdf 

SSF11NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60 series MOSFETs is a new t
7.2. Size:495K silikron
ssf11ns65uf.pdf 

SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new
7.3. Size:438K silikron
ssf11ns60uf.pdf 

SSF11NS60UF Main Product Characteristics: VDSS 600V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60UF series MOSFETs is a new
7.4. Size:434K silikron
sssf11ns65uf.pdf 

SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new
7.5. Size:379K silikron
ssf11ns65f.pdf 

SSF11NS65FMain Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.)ID 11AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65F series MOSFETs is a new technology. wh
7.6. Size:373K silikron
ssf11ns65.pdf 

SSF11NS65Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.)ID 11AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65 series MOSFETs is a new technology. which
7.7. Size:472K silikron
ssf11ns65ud.pdf 

SSF11NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.33 (typ.) ID 11A Marking and Pin TO-252 (DPAK) S che mati c Diag r am Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65UD series MOSFETs is a new techno
7.8. Size:479K silikron
ssf11ns65u.pdf 

SSF11NS65U Main Product Characteristics: VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220 S che mati c di ag ra m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65U series MOSFETs is a new te
7.9. Size:484K silikron
ssf11ns60d.pdf 

SSF11NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Ma r ki ng a nd pin TO-252 S che ma ti c di ag r a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60D series MOSFETs is a
7.10. Size:447K silikron
ssf11ns60f.pdf 

SSF11NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.36 (typ.) ID 11A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS60F series MOSFETs is a new technol
Другие MOSFET... SSF11NS60D
, SSF11NS60F
, SSF11NS60UF
, SSF11NS65
, SSF11NS65F
, SSF11NS65U
, SSF11NS65UD
, SSF11NS70UF
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, SSF12N60F
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, SSF1502G5
.
History: AFP8206
| RU40130R