SSF1221J2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF1221J2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 685 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: DFN2X2-6L
Búsqueda de reemplazo de MOSFET SSF1221J2
Principales características: SSF1221J2
ssf1221j2.pdf
SSF1221J2 Main Product Characteristics VDSS -12V RDS(on) 14.4 m (typ.) ID -12A DFN2x2-6L Pin Assignment Schematic diagram Features and Benefits Advanced trench MOSFET process technology Special designed for battery charge, load switching in cellular handset and general ultraportable applications Ultra low on-resistance with low gate charge Fast switc
ssf12n60f.pdf
SSF12N60F Main Product Characteristics VDSS 600V RDS(on) 0.55 (typ.) ID 12A Sche ma ti c di agr a m TO220F Marking and pin Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf12n65f.pdf
SSF12N65F Main Product Characteristics VDSS 650V RDS(on) 0.68 (typ.) ID 12A Marking and pin TO220F Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Otros transistores... SSF11NS60F , SSF11NS60UF , SSF11NS65 , SSF11NS65F , SSF11NS65U , SSF11NS65UD , SSF11NS70UF , SSF11NS70UG , EMB04N03H , SSF12N60F , SSF12N65F , SSF1341 , SSF13N50 , SSF13N50F , SSF1502D , SSF1502G5 , SSF1504D .
Liste
Recientemente añadidas las descripciónes de los transistores:
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